Datasheet > BCV46-Q

BCV46-Q

更新时间： 2024-11-19 11:11:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	202K
描述
PNP Darlington transistorProduction

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BCV46-Q 数据手册

BCV46-Q

PNP Darlington transistor

12 May 2022

Product data sheet

1. General description

PNP Darlington transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

package.

NPN complement: BCV47-Q

2. Features and benefits

•

High current

•

High current gain

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

For general AF applications and where high amplification is required

4. Quick reference data

Table 1. Quick reference data

Symbol

V_CBO

Parameter

Conditions

Min

Typ

Max

-80

Unit

collector-base voltage open emitter

V_CES

collector-emitter

voltage

base short-circuited to emitter

-60

I_C

collector current

-500

-800

I_CM

h_FE

peak collector current

DC current gain

V_CE= -5 V; I_C= -100 mA; T_amb= 25 °C [1]

10000

[1] Pulse test: t_p≤ 300 μs; δ ≤ 0.02

5. Pinning information

Table 2. Pinning information

Symbol

Description

base

Simplified outline

Graphic symbol

emitter

TR1

collector

TR2

aaa-034789

SOT23

12 3 4 5 6 7...10

中文翻译

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