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BCR10PNH6727XTSA1 PDF预览

BCR10PNH6727XTSA1

更新时间: 2024-01-15 15:29:58
品牌 Logo 应用领域
英飞凌 - INFINEON 开关光电二极管晶体管
页数 文件大小 规格书
7页 528K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SOT-363, 6 PIN

BCR10PNH6727XTSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life包装说明:SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code:compliantFactory Lead Time:1 week
风险等级:5.76其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN AND PNP
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):130 MHzBase Number Matches:1

BCR10PNH6727XTSA1 数据手册

 浏览型号BCR10PNH6727XTSA1的Datasheet PDF文件第2页浏览型号BCR10PNH6727XTSA1的Datasheet PDF文件第3页浏览型号BCR10PNH6727XTSA1的Datasheet PDF文件第4页浏览型号BCR10PNH6727XTSA1的Datasheet PDF文件第5页浏览型号BCR10PNH6727XTSA1的Datasheet PDF文件第6页浏览型号BCR10PNH6727XTSA1的Datasheet PDF文件第7页 
BCR10PN  
NPN/PNP Silicon Digital Transistor Array  
Switching circuit, inverter, interface circuit,  
driver circuit  
4
5
3
2
6
Two (galvanic) internal isolated NPN/PNP  
1
Transistors in one package  
Built in bias resistor NPN and PNP  
(R =10 k, R =10 k)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
1
2
C1  
6
B2  
5
E2  
4
R2  
R1  
TR2  
TR1  
R1  
R2  
1
2
3
E1  
B1  
C2  
EHA07176  
Tape loading orientation  
Marking on SOT-363 package  
(for example W1s)  
corresponds to pin 1 of device  
Top View  
6 5 4  
W1s  
Position in tape: pin 1  
opposite of feed hole side  
1 2 3  
Direction of Unreeling  
EHA07193  
Type  
BCR10PN  
Marking  
W1s  
Pin Configuration  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1  
Package  
SOT363  
Maximum Ratings for NPN and PNP Types  
Parameter  
Symbol  
Value  
Unit  
50  
50  
V
Collector-emitter voltage  
Collector-base voltage  
Input forward voltage  
V
V
V
V
CEO  
CBO  
i(fwd)  
i(rev)  
40  
10  
Input reverse voltage  
100  
250  
150  
mA  
mW  
°C  
DC collector current  
Total power dissipation, T = 115 °C  
Junction temperature  
Storage temperature  
I
P
T
j
T
C
S
tot  
-65 ... 150  
stg  
Thermal Resistance  
Junction - soldering point  
1)  
R
140  
K/W  
thJS  
1
For calculation of R  
please refer to Application Note AN077 (Thermal Resistance Calculation)  
thJA  
2011-09-22  
1

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