是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 1.6 | 湿度敏感等级: | 1 |
峰值回流温度(摄氏度): | 260 | 处于峰值回流温度下的最长时间: | 10 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCP69E6327 | INFINEON |
获取价格 |
Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
BCP69E6327 | ROCHESTER |
获取价格 |
1A, 20V, PNP, Si, POWER TRANSISTOR | |
BCP69E6433 | INFINEON |
获取价格 |
Power Bipolar Transistor, 1A I(C), 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin | |
BCP69G-25-AA3-R | UTC |
获取价格 |
Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 | |
BCP69G-XX-AA3-R | UTC |
获取价格 |
PNP MEDIUM POWER TRANSISTOR | |
BCP69L-16-AA3-B-R | UTC |
获取价格 |
NPN GENERAL PURPOSE AMPLIFIER | |
BCP69L-16-AA3-C-R | UTC |
获取价格 |
NPN GENERAL PURPOSE AMPLIFIER | |
BCP69L-16-AA3-E-R | UTC |
获取价格 |
NPN GENERAL PURPOSE AMPLIFIER | |
BCP69L-16-AA3-F-R | UTC |
获取价格 |
Transistor | |
BCP69L-16-AA3-R | UTC |
获取价格 |
Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 |