Datasheet > BCP51-C

BCP51-C

更新时间： 2024-09-20 01:16:23

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SECOS		/
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2页	189K
描述
PNP Plastic Encapsulate Transistor

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BCP51-C 数据手册

BCP51-C

-1A, -45V

PNP Plastic Encapsulate Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

ꢀ

For AF Driver and Output Stages

High Collector Current

Low Collector-Emitter Saturation Voltage

SOT-223

Top View

C B

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-223

2.5K

13 inch

Collector

ORDER INFORMATION

Millimeter

Min. Max.

0.18

2.00 REF.

0.20 0.40

1.10 REF.

2.30 REF.

2.80 3.20

Part Number

Type

REF.

Min.

Max.

6.70

7.30

3.80

1.90

4.75

0.85

5.90

6.70

3.30

1.42

4.45

0.60

BCP51-16-C

Lead (Pb)-free and Halogen-free

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

-45

Unit

Collector-Base Voltage

Collector-Emitter Voltage

-45

Emitter-Base Voltage

-5

Collector Current-Continuous

Collector Power Dissipation

Thermal Resistance from Junction to Ambient

Storage Temperature Range

-1

P_D

1.5

R_θJA

T_STG

°C/W

°C

-65~150

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Min.

-45

-5

Max.

Unit

Test Conditions

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

I_C= -0.1mA, I_E=0

I_C= -10mA, I_B=0

-100

I_C= -10µA, I_E=0

V_CB= -30V, I_E=0

100

V_CE= -2V, I_C= -5mA

V_CE= -2V, I_C= -150mA

V_CE= -2V, I_C= -500mA

I_C= -500mA, I_B= -50mA

V_CE= -2V, I_C= -500mA

DC Current Gain

h_FE

250

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

V_CE(sat)

V_BE

-0.5

-1

Transition Frequency

f_T

100

MHz V_CE= -10V, I_C= -50mA, f=100MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

17-Oct-2017 Rev. D

Page 1 of 2

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