生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.07 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 45 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 50 MHz |
VCEsat-Max: | 0.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCP51TA | DIODES |
获取价格 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 | |
BCP51TA | ZETEX |
获取价格 |
Small Signal Bipolar Transistor, 1-Element, Silicon | |
BCP51-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 1 A, 45 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BCP51-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 1 A, 45 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BCP51TC | DIODES |
获取价格 |
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 | |
BCP51TRL | YAGEO |
获取价格 |
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 | |
BCP51TRL13 | YAGEO |
获取价格 |
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 | |
BCP52 | DIOTEC |
获取价格 |
Surface mount Si-Epitaxial PlanarTransistors | |
BCP52 | DIODES |
获取价格 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 | |
BCP52 | WINNERJOIN |
获取价格 |
TRANSISTOR (PNP) |