JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-223(8R) Plastic-Encapsulate Transistors
BCP51,52,53 TRANSISTOR (PNP)
SOT-223
FEATURES
z
z
z
z
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP54...BCP56 (NPN)
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
BCP51
-45
BCP52
-60
BCP53
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Peak Pulse Collector Current
Base Current-Continuous
-100
-80
-45
-60
V
-5
V
-1
A
-2
ICM
A
-100
-200
m A
m A
IB
IB M
Peak Pulse Base Current
PC
Collector Power Dissipation
1.5
W
Operation Junction and Storage Temperature Range
-55~+150
TJ,Tstg
℃
RθJA
Thermal Resistance Junction to Ambient
94
℃/W
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Max
Unit
Collector-base breakdown voltage
BCP51
BCP52
BCP53
BCP51
BCP52
BCP53
-45
-60
-100
-45
-60
-80
V(BR)CBO
IC=- 0.1mA,IE=0
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -10mA,IB=0
V
Base-emitter breakdown voltage
Collector cut-off current
V(BR)EBO
ICBO
IE= -10μA,IC=0
-5
V
VCB= -30 V, IE=0
-100
250
nA
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE
VCE=-2V, IC=-5mA
25
63
25
DC current gain
VCE= -2V, IC=-150m A
VCE= -2V, IC=-500m A
IC=-500mA,IB=-50mA
VCE=-2V, IC=-500m A
VCE=-10V,IC=-50mA,f=100MHz
Collector-emitter saturation voltage
Base-emitter voltage
-0.5
-1
V
V
Transition frequency
fT
100
MHz
CLASSIFICATION OF hFE(2)
BCP51-10, BCP52-10, BCP53-10
63-160
BCP51-16, BCP52-16, BCP53-16
100-250
Rank
Range
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1
Rev. - 2.1