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BC847PNE6327XT PDF预览

BC847PNE6327XT

更新时间: 2024-11-25 13:05:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
10页 853K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon,

BC847PNE6327XT 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
风险等级:5.8最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):110JESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN AND PNP表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

BC847PNE6327XT 数据手册

 浏览型号BC847PNE6327XT的Datasheet PDF文件第2页浏览型号BC847PNE6327XT的Datasheet PDF文件第3页浏览型号BC847PNE6327XT的Datasheet PDF文件第4页浏览型号BC847PNE6327XT的Datasheet PDF文件第5页浏览型号BC847PNE6327XT的Datasheet PDF文件第6页浏览型号BC847PNE6327XT的Datasheet PDF文件第7页 
BC846PN/UPN_BC847PN  
NPN/PNP Silicon AF Transistor Arrays  
For AF input stage and driver applications  
High current gain  
Low collector-emitter saturation voltage  
Two (galvanic) internal isolated NPN/PNP  
transistor in one package  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BC846PN  
BC846UPN  
BC847PN  
C1  
B2  
E2  
6
5
4
TR2  
TR1  
1
2
3
E1  
B1  
C2  
EHA07177  
Type  
Marking  
1Os  
1Os  
Pin Configuration  
Package  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
BC846PN  
BC846UPN  
BC847PN  
1Ps  
2011-10-05  
1

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