Datasheet > BC847PN

BC847PN

更新时间： 2024-09-23 08:49:47

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
3页	694K
描述
Multi-Chip Transistor

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中文翻译

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数据手册

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BC847PN 数据手册

BC847PN

NPN - PNP Silicon

Multi-Chip Transistor

Elektronische Bauelemente

RoHS Compliant Product

SOT-363

FEATURE



Epitaxial Die Construction

Two internal isolated NPN/PNP transistors in one package

Power Dissipation

_CM: 0.2 W (Temp. = 25˚C)

Collector Current

_CM: 0.1A

Collector-base Voltage

_(BR)CBO: 50/-50 V



Operating & Storage Junction Temperature

  

T_J, T_STG: -55˚C~+150˚C

MARKING

  

ABSOLUTE MAXIMUM RATINGS OF TR1 at Ta = 25°C

PARAMETER

SYMBOL

VALUE

UNITS

Collector to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Currrent – Continuous

Collector Power Dissipation

Junction Temperature

100

℃

P_C

200

T_J

150

Storage Temperature

T_STG

-55 ~ +150

℃

ELECTRICAL CHARACTERISTICS OF TR1 (NPN Transister) at Ta = 25°C

CHARACTERISTIC

TEST CONDITION

SYMBOL

MIN.

TYP. MAX.

UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_C=10μA, I_E=0

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C= 10 mA, I_B= 0

I_E=1μA, I_C=0

V_CB=30V, I_E=0

Emitter Cutoff Current

V_EB=5V, I_C=0

I_EBO

DC Current Gain

V_CE=5V, I_C=2mA

I_C=10mA, I_B=0.5mA

I_C=100mA, I_B=5mA

I_C=10mA, I_B=0.5mA

I_C=100mA, I_B=5mA

h_FE

200

450

V_CE(sat)

V_BE(sat)

0.25

Collector-emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Voltage

0.6

0.7

0.9

I_C=10mA, V_CE=5V

V_BE(On)

C_ob

0.58

100

0.7

0.72

6.0

Collector Output Capacitance

Transition Frequency

V_CB=10V, I_E=0, f=1MHz

V_CE=5V, I_C=10mA, f=100MHz

f_T

MHz

V_CE=5V, I_C=0.2mA, f=1kHz

Noise Figure

Rg=2KΩ, △f=200Hz

20-Oct-2009 Rev. C

Page 1 of 3

12 3

中文翻译

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