Datasheet > BC847PN_1

BC847PN_1

更新时间： 2024-02-13 18:42:49

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
2页	128K
描述
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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中文翻译

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数据手册

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BC847PN_1 数据手册

BC847PN

NPN

PNP

NPN

PNP

Complementary Surface Mount General Purpose Si-Planar Transistors

Komplementäre Si-Planar Transistoren für die Oberflächenmontage

Version 2006-09-05

Power dissipation

Verlustleistung

300 mW

SOT-363

0.01 g

2^±0.1

2 x 0.65

0.9^±0.1

Plastic case

Kunststoffgehäuse

Type

Code

Weight approx. – Gewicht ca.

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

2.4

Dimensions - Maße [mm]

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

6 = C1

1 = E1

5 = B2

2 = B1

4 = E2

3 = C2

Maximum ratings (T_A= 25°C)

per transistor – pro Transistor

Grenzwerte (T_A= 25°C)

BC847PN

45 V

Collector-Emitter-volt. – Kollektor-Emitter-Spannung

Collector-Base-voltage – Kollektor-Basis-Spannung

Emitter-Base-voltage – Emitter-Basis-Spannung

Power dissipation – Verlustleistung

B open

E open

C open

V_CBO

V_CEO

V_EB0

P_tot

I_C

50 V

6 V

300 mW ¹)

100 mA

200 mA

Collector current – Kollektorstrom (dc)

Peak Collector current – Kollektor-Spitzenstrom

Peak Base current – Basis-Spitzenstrom

I_CM

I_BM

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

T_j

T_S

-55...+150°C

-55…+150°C

Characteristics (T_j= 25°C)

Kennwerte (T_j= 25°C)

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis

V_CE= 5 V, I_C= 2 mA

T1 - NPN

T2 - PNP

h_FE

200

220

–

450

475

- V_CE= 5 V, - I_C= 2 mA

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung ²)

I_C= 10 mA, I_B= 0.5 mA

I_C= 100 mA, I_B= 5 mA

V_CEsat

–

250 mV

600 mV

T1 - NPN

T2 - PNP

- I_C= 10 mA, - I_B= 0.5 mA

- I_C= 100 mA, - I_B= 5 mA

- V_CEsat

–

300 mV

650 mV

Mounted on P.C. board with 3 mm²copper pad at each terminal

Montage auf Leiterplatte mit 3 mm²Kupferbelag (Lötpad) an jedem Anschluss

Tested with pulses t_p= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t_p= 300 µs, Schaltverhältnis ≤ 2%

http://www.diotec.com/

中文翻译

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与BC847PN_1相关器件

型号	品牌	获取价格	描述	数据表
BC847PN-13-F	DIODES	获取价格	Small Signal Bipolar Transistor
BC847PN-7	DIODES	获取价格	COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR
BC847PN-7-F	DIODES	获取价格	COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR
BC847PN-7R-F	DIODES	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), NPN and PNP
BC847PNE6327	INFINEON	获取价格	NPN/PNP Silicon AF Transistor Arrays
BC847PNE6327	ROCHESTER	获取价格	100mA, 45V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
BC847PNE6327BTSA1	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
BC847PNE6327HTSA1	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon
BC847PNE6327XT	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
BC847PNE6433	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon

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