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BC847PNE6327 PDF预览

BC847PNE6327

更新时间: 2024-11-25 12:52:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
10页 853K
描述
NPN/PNP Silicon AF Transistor Arrays

BC847PNE6327 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.28
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):110JESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

BC847PNE6327 数据手册

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BC846PN/UPN_BC847PN  
NPN/PNP Silicon AF Transistor Arrays  
For AF input stage and driver applications  
High current gain  
Low collector-emitter saturation voltage  
Two (galvanic) internal isolated NPN/PNP  
transistor in one package  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BC846PN  
BC846UPN  
BC847PN  
C1  
B2  
E2  
6
5
4
TR2  
TR1  
1
2
3
E1  
B1  
C2  
EHA07177  
Type  
Marking  
1Os  
1Os  
Pin Configuration  
Package  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
BC846PN  
BC846UPN  
BC847PN  
1Ps  
2011-10-05  
1

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