Datasheet > BC817UPN-E6327

BC817UPN-E6327

更新时间： 2024-11-12 03:30:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	524K
描述
Small Signal Bipolar Transistor, 0.5A I(C), NPN and PNP

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数据手册

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BC817UPN-E6327 数据手册

BC817UPN

NPN Silicon AF Transistor Array

• For AF stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Two (galvanic) internal isolated

NPN/PNP transistors in one package

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Tape loading orientation

TR2

Marking on SC74 package

TR1

Top View

(for example W1s)

corresponds to pin 1 of device

5 4

W1s

EHA07177

Position in tape: pin 1

opposite of feed hole side

Direction of Unreeling

SC74_Tape

Type

BC817UPN

Marking

1Bs

Pin Configuration

1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74

Package

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Peak collector current, t ≤ 10 ms

Base current

Peak base current

Total power dissipation-

Symbol

Value

Unit

CEO

CBO

EBO

500

1000

100

200

330

°C

tot

T ≤ 115 °C

150

Junction temperature

Storage temperature

-65 ... 150

stg

2011-09-15

12 3 4 5 6 7

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