Datasheet > BC817W

BC817W

更新时间： 2024-11-12 14:55:43

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	625K
描述
SOT-323

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数据手册

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BC817W 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

BC817W TRANSISTOR (NPN)

SOT-323

FEATURES



For General AF Applications

High Collector Current

High Current Gain

Low Collector-Emitter Saturation Voltage

1. BASE

2. EMITTER

3. COLLECTOR

MAXMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

0.5

P_C

0.2

R_θJA

T_J,T_stg

Thermal Resistance from Junction to Ambient

Operation Junction and Storage Temperature Range

625

℃/W

℃

-55~+150

ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=10μA,I_E=0

V_(BR)CEOI_C=10mA,I_B=0

V_(BR)EBOI_E=1μA,I_C=0

I_CBO

I_EBO

V_CB=20V,I_E=0

0.1

μA

Emitter cut-off current

V_EB=5V,I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

V_BE(ON)

f_T

V_CE=1V,I_C=100mA

V_CE=1V,I_C=500mA

I_C=500mA,I_B=50mA

V_CE=1V,I_C= 500mA

V_CE=5V,I_C=10mA,f=100MHz

V_CB=10V,f=1MHz

100

600

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

0.7

1.2

Transition frequency

100

MHz

Collector output capacitance

C_ob

CLASSIFICATION of h_{FE (1)}

Rank

BC817-16W

100-250

BC817-25W

160-400

BC817-40W

250-600

Range

Marking

www.jscj-elec.com

Rev. - 2.0

12 3 4

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