5秒后页面跳转
BC817W PDF预览

BC817W

更新时间: 2024-02-23 06:55:42
品牌 Logo 应用领域
德欧泰克 - DIOTEC /
页数 文件大小 规格书
2页 119K
描述
Surface mount Si-Epitaxial PlanarTransistors

BC817W 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SC-70包装说明:PLASTIC, SC-70, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.11
Is Samacsys:N最大集电极电流 (IC):0.5 A
基于收集器的最大容量:5 pF集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.7 VBase Number Matches:1

BC817W 数据手册

 浏览型号BC817W的Datasheet PDF文件第2页 
BC 817W / BC 818W  
NPN  
General Purpose Transistors  
Surface mount Si-Epitaxial PlanarTransistors  
NPN  
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage  
Power dissipation – Verlustleistung  
225 mW  
SOT-323  
±0.1  
±0.1  
Plastic case  
2
1
0.3  
Kunststoffgehäuse  
3
Type  
Weight approx. – Gewicht ca.  
0.01 g  
Code  
1
2
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
1.3  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
Dimensions / Maße in mm  
1 = B 2 = E 3 = C  
Maximum ratings (TA = 25C)  
Grenzwerte (TA = 25C)  
BC 817W  
BC 818W  
25 V  
Collector-Emitter-voltage  
Collector-Emitter-voltage  
Collector-Base-voltage  
Emitter-Base-voltage  
Power dissipation – Verlustleistung  
Collector current – Kollektorstrom (DC)  
Peak Coll. current – Kollektor-Spitzenstrom  
Peak Base current – Basis-Spitzenstrom  
Peak Emitter current – Emitter-Spitzenstrom  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
B open  
B shorted VCES  
E open  
C open  
VCE0  
45 V  
50 V  
50 V  
30 V  
30 V  
VCB0  
VEB0  
Ptot  
IC  
ICM  
IBM  
- IEM  
Tj  
5 V  
225 mW 1)  
500 mA  
1000 mA  
200 mA  
1000 mA  
150C  
TS  
- 65…+ 150C  
Characteristics, Tj = 25C  
Kennwerte, Tj = 25C  
Min.  
Typ.  
Max.  
DC current gain – Kollektor-Basis-Stromverhältnis  
VCE = 1 V, IC = 100 mA  
VCE = 1 V, IC = 500 mA  
hFE  
hFE  
100  
40  
600  
BC817W  
BC818W  
Group -16W hFE  
Group -25W hFE  
Group -40W hFE  
100  
160  
250  
160  
250  
400  
250  
400  
600  
VCE = 1 V, IC = 100 mA  
1
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß  
8
01.11.2003  

与BC817W相关器件

型号 品牌 描述 获取价格 数据表
BC817W,115 NXP BC817; BC817W; BC337 - 45 V, 500 mA NPN general-purpose transistors SC-70 3-Pin

获取价格

BC817W,135 NXP BC817; BC817W; BC337 - 45 V, 500 mA NPN general-purpose transistors SC-70 3-Pin

获取价格

BC817W/T3 NXP TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP Gene

获取价格

BC817W_15 KEXIN NPN Transistors

获取价格

BC817W-16 KEXIN NPN Transistors

获取价格

BC817W-25 DIOTEC Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO

获取价格