Datasheet > BC817W

BC817W

更新时间： 2024-06-27 12:13:27

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	491K
描述
SOT-323

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中文翻译

获取价格

数据手册

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BC817W 数据手册

BC817W

BIPOLAR TRANSISTOR (NPN)

FEATURES

 Complementary to BC807W

 High Current Gain

 High Collector Current

 Low Collector-emitter saturation voltage

 Surface Mount device

SOT-323

MECHANICAL DATA



Case: SOT-323

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

500

°C/W

°C

200

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

625

150

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I =10uA I =0

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

，

V(BR)CEO

V(BR)EBO

I_CBO

I =10mA I =0

，

I =1uA I =0

E C

0.1

600

V_CB=20V, I_E=0

Emitter cut-off current

V_EB=5V, I_C=0

I_EBO

V_CE=1V, I_C=100mA

V_CE=1V, I_C=500mA

I_C=500mA，I_B=50mA

V_CE=1V, I_C=500mA

100

DC current gain

h_FE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE(sat)

V_BE

0.7

1.2

V_CE=5V,I_C=10mA, f=100

Transition frequency

f_T

100

MHz

V_CB=10V,f=1

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

Range

Marking

BC817-16W

100-250

BC817-25W

160-400

BC817-40W

250-600

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