BC559BTA

更新时间： 2024-11-09 12:31:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管开关
页数	文件大小	规格书
4页	151K
描述
PNP Epitaxial Silicon Transistor

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

BC559BTA 数据手册

October 2012

BC556/557/558/559/560

PNP Epitaxial Silicon Transistor

Features

• Switching and Amplifier

• High Voltage: BC556, V_CEO= -65V

• Low Noise: BC559, BC560

• Complement to BC546 ... BC 550

TO-92

1. Collector 2. Base 3. Emitter

Absolute Maximum Ratings T_a= 25°C unless otherwise noted

Symbol

V_CBO

Parameter

Collector-Base Voltage

: BC556

Value

Units

-80

-50

-30

: BC557/560

: BC558/559

V_CEO

Collector-Emitter Voltage

: BC556

: BC557/560

: BC558/559

-65

-45

-30

V_EBO

I_C

Emitter-Base Voltage

-5

-100

Collector Current (DC)

Collector Power Dissipation

Junction Temperature

Storage Temperature

C

P_C

500

T_J

150

T_STG

-65 ~ 150

C

Electrical Characteristics T_a= 25C unless otherwise noted

Symbol

I_CBO

Parameter

Collector Cut-off Current

DC Current Gain

Test Condition

V_CB= -30V, I_E=0

Min.

Typ. Max. Units

-15

h_FE

V_CE= -5V, I_C=2mA

110

800

V_CE(sat) Collector-Emitter Saturation Volt-

age

I_C= -10mA, I_B= -0.5mA

I_C= -100mA, I_B= -5mA

-90

-250

-300

-650

V_BE(sat) Collector-Base Saturation Voltage

I_C= -10mA, I_B= -0.5mA

I_C= -100mA, I_B= -5mA

-700

-900

V_BE(on) Base-Emitter On Voltage

V_CE= -5V, I_C= -2mA

V_CE= -5V, I_C= -10mA

-600

-660

-750

-800

f_T

Current Gain Bandwidth Product

Output Capacitance

V_CE= -5V, I_C= -10mA,

f=10MHz

150

MHz

C_ob

V_CB= -10V, I_E=0, f=1MHz

Noise Figure : BC556/557/558

: BC559/560

V_CE= -5V, I_C= -200A

f=1KHz, R_G=2K

V_CE= -5V, I_C= -200A

R_G=2Kf=30~15000MHz

1.2

: BC559

: BC560

h_FEClassification

Classification

h_FE

110 ~ 220

200 ~ 450

420 ~ 800

BC556/557/558/559/560 Rev. B0

www.fairchildsemi.com

12 3 4

中文翻译

下载PDF

BC559BTA 替代型号

型号	品牌	替代类型	描述	数据表
BC559BTA	ONSEMI	功能相似	PNP Epitaxial Silicon Transistor, 2000-FNFLD
BC558BTAR	FAIRCHILD	功能相似	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,

与BC559BTA相关器件

型号	品牌	获取价格	描述	数据表
BC559BU	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
BC559BZL1	ONSEMI	获取价格	100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN
BC559C	FAIRCHILD	获取价格	NPN EPITAXIAL SILICON TRANSISTOR
BC559C	NXP	获取价格	PNP general purpose transistor
BC559C	MOTOROLA	获取价格	Low Noise Transistors
BC559C	ONSEMI	获取价格	Low Noise Transistors
BC559C	INFINEON	获取价格	PNP SILICON TRANSISTORS
BC559C	DIOTEC	获取价格	Si-Epitaxial PlanarTransistors
BC559C	CENTRAL	获取价格	30V,100mA,500mW Through-Hole Transistor-Small Signal (<=1A) PNP Low Noise
BC559-C	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon