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BC559BZL1 PDF预览

BC559BZL1

更新时间: 2024-11-10 04:04:27
品牌 Logo 应用领域
安森美 - ONSEMI 放大器晶体管
页数 文件大小 规格书
3页 134K
描述
100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN

BC559BZL1 数据手册

 浏览型号BC559BZL1的Datasheet PDF文件第2页浏览型号BC559BZL1的Datasheet PDF文件第3页 
ON Semiconductort  
Low Noise Transistors  
PNP Silicon  
BC559B, C  
BC560C  
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
BC559 BC560  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
–30  
–30  
–45  
–50  
Vdc  
–5.0  
Vdc  
Collector Current — Continuous  
I
C
–100  
mAdc  
1
2
3
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
C
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
COLLECTOR  
1
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
q
JA  
JC  
R
83.3  
q
2
BASE  
3
EMITTER  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I = –10 mAdc, I = 0)  
V
Vdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
BC559  
BC560  
–30  
–45  
C
B
Collector–Base Breakdown Voltage  
(I = –10 µAdc, I = 0)  
V
V
Vdc  
Vdc  
BC559  
BC560  
–30  
–50  
C
E
Emitter–Base Breakdown Voltage  
(I = –10 mAdc, I = 0)  
–5.0  
E
C
Collector Cutoff Current  
(V = –30 Vdc, I = 0)  
I
CBO  
–15  
–5.0  
nAdc  
µAdc  
CB  
E
(V = –30 Vdc, I = 0, T = +125°C)  
CB  
E
A
Emitter Cutoff Current  
(V = –4.0 Vdc, I = 0)  
I
–15  
nAdc  
EBO  
EB  
C
Semiconductor Components Industries, LLC, 2001  
255  
Publication Order Number:  
September, 2001 – Rev. 0  
BC559B/D  

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