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BC559C PDF预览

BC559C

更新时间: 2024-11-26 22:48:15
品牌 Logo 应用领域
德欧泰克 - DIOTEC 晶体小信号双极晶体管IOT
页数 文件大小 规格书
2页 89K
描述
Si-Epitaxial PlanarTransistors

BC559C 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-W3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:4.95Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):420
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-W3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

BC559C 数据手册

 浏览型号BC559C的Datasheet PDF文件第2页 
BC 556 ... BC 559  
PNP  
General Purpose Transistors  
PNP  
Si-Epitaxial PlanarTransistors  
Power dissipation – Verlustleistung  
500 mW  
Plastic case  
TO-92  
(10D3)  
Kunststoffgehäuse  
Weight approx. – Gewicht ca.  
0.18 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
Standard packaging taped in ammo pack  
Standard Pinning  
Standard Lieferform gegurtet in Ammo-Pack  
1 = C 2 = B 3 = E  
Maximum ratings (TA = 25C)  
Grenzwerte (TA = 25C)  
BC 556  
65 V  
80 V  
BC 557  
45 V  
50 V  
BC 558/559  
30 V  
Collector-Emitter-voltage  
Collector-Base-voltage  
Emitter-Base-voltage  
Power dissipation – Verlustleistung  
Collector current – Kollektorstrom (DC)  
Junction temp. – Sperrschichttemperatur  
B open  
E open  
C open  
- VCE0  
- VCB0  
- VEB0  
Ptot  
- IC  
Tj  
30 V  
5 V  
500 mW 1)  
100 mA  
150C  
Storage temperature – Lagerungstemperatur  
TS  
- 55…+ 150C  
Characteristics (Tj = 25C)  
Kennwerte (Tj = 25C)  
Group A  
Group B  
Group C  
DC current gain – Kollektor-Basis-Stromverhältnis  
- VCE = 5 V, - IC = 2 mA  
hFE  
110...220  
200...460  
420...800  
h-Parameters at - VCE = 5V, - IC = 2 mA, f = 1 kHz  
Small signal current gain  
hfe  
typ. 220  
typ. 330  
typ. 600  
Stromverstärkung  
Input impedance – Eingangsimpedanz  
Output admittance – Ausg.-Leitwert  
hie  
hoe  
1.6...4.5 k  
18 < 30 S  
3.2...8.5 kꢀ  
30 < 60 S  
6...15 kꢀ  
60 < 110 S  
Reverse voltage transfer ratio  
Spannungsrückwirkung  
Collector saturation voltage – Kollektor-Sättigungsspg.  
- IC = 100 mA, - IB = 5 mA -VCEsat  
hre  
typ.1.5 *10-4  
typ. 2 *10-4  
typ. 3 *10-4  
300 mV  
1
)
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case  
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden  
8
01.11.2003  

BC559C 替代型号

型号 品牌 替代类型 描述 数据表
BC556A DIOTEC

完全替代

Si-Epitaxial PlanarTransistors
BC559C ONSEMI

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Low Noise Transistors
BC556A NXP

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PNP general purpose transistors

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