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BC559C

更新时间: 2024-11-08 22:48:15
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安森美 - ONSEMI 晶体晶体管IOT
页数 文件大小 规格书
4页 88K
描述
Low Noise Transistors

BC559C 数据手册

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Order this document  
by BC559B/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR  
1
2
BASE  
3
EMITTER  
1
MAXIMUM RATINGS  
2
3
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
BC559x  
BC560C  
–45  
Unit  
Vdc  
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
V
CEO  
V
CBO  
V
EBO  
–30  
–30  
–50  
Vdc  
–5.0  
Vdc  
Collector Current — Continuous  
I
C
–100  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
(I = –10 mAdc, I = 0)  
V
V
V
Vdc  
Vdc  
Vdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
BC559B, C  
BC560C  
–30  
–45  
C
B
CollectorBase Breakdown Voltage  
(I = –10 µAdc, I = 0)  
BC559B, C  
BC560C  
–30  
–50  
C
E
EmitterBase Breakdown Voltage  
(I = –10 Adc, I = 0)  
–5.0  
E
C
Collector Cutoff Current  
I
CBO  
(V  
CB  
(V  
CB  
= –30 Vdc, I = 0)  
–15  
–5.0  
nAdc  
µAdc  
E
= –30 Vdc, I = 0, T = +125°C)  
E
A
Emitter Cutoff Current  
(V = –4.0 Vdc, I = 0)  
I
–15  
nAdc  
EBO  
EB  
C
replaces BC559/D  
Motorola, Inc. 1997  

BC559C 替代型号

型号 品牌 替代类型 描述 数据表
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