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MPSA77 PDF预览

MPSA77

更新时间: 2024-11-25 04:39:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管达林顿晶体管
页数 文件大小 规格书
3页 27K
描述
PNP Darlington Transistor

MPSA77 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.59
最大集电极电流 (IC):1.2 A配置:DARLINGTON
最小直流电流增益 (hFE):10000JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:PNP
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

MPSA77 数据手册

 浏览型号MPSA77的Datasheet PDF文件第2页浏览型号MPSA77的Datasheet PDF文件第3页 
MPSA77  
PNP Darlington Transistor  
This device is designed for applications requiring extremely high  
current gain at currents to 800mA.  
Sourced from process 61.  
TO-92  
1. Emitter 2. Base 3. Collector  
1
Absolute Maximum Ratings * T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
-60  
Units  
V
V
V
V
Collector-Emitter Voltage  
CES  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
-60  
V
CBO  
EBO  
-10  
V
I
- Continuous  
-1.2  
A
C
T , T  
Operating and Storage Junction Temperature Range  
-55 ~ +150  
°C  
J
STG  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1. These ratings are based on a maximum junction temperature of 150 degrees C.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
V
Collector-Emitter Breakdown Voltage  
Collector Cutoff Current  
I
= -100µA, I = 0  
-60  
V
(BR)CES  
CBO  
C
B
I
I
V
V
= -30V, I = 0  
-100  
-100  
nA  
nA  
CB  
E
Emitter Cutoff Current  
= -10V, I = 0  
C
EBO  
EB  
On Characteristics *  
h
DC Current Gain  
I
I
= -10mA, V = -5.0V  
10,000  
10,000  
FE  
C
C
CE  
= -100mA, V = -5.0V  
CE  
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I
I
= -100mA, I = -0.1mA  
-1.5  
-2.0  
V
V
CE  
C
C
B
= -100mA, V = -5.0mA  
BE  
CE  
Small Signal Characteristics *  
Current Gain Dandwidth Product  
f
I
= -10mA, V = -5.0V  
100  
MHz  
T
C
CE  
f = 100MHz  
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%  
Thermal Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Max.  
Units  
P
Total Device Dissipation  
Derate above 25°C  
625  
5.0  
mW  
mW/°C  
D
R
R
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
83.3  
200  
°C/W  
°C/W  
θJC  
θJA  
©2003 Fairchild Semiconductor Corporation  
Rev. A, October 2003  

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