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MPSA92

更新时间: 2024-11-12 04:39:15
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页数 文件大小 规格书
2页 83K
描述
PNP EPITAXIAL PLANAR SILICON TRANSISTOR

MPSA92 数据手册

 浏览型号MPSA92的Datasheet PDF文件第2页 
Transys  
Electronics  
L
I M I T E D  
PNP EPITAXIAL PLANAR SILICON TRANSISTOR  
MPSA92  
TO-92  
CBE  
C
B
E
Designed For General Purpose Applications Requiring High Breakdown Voltages,  
Low Saturation Voltages And Low Capacitance.  
Complementary is MPSA42  
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)  
DESCRIPTION  
SYMBOL  
VALUE  
UNIT  
Collector -Emitter Voltage  
Collector -Base Voltage  
Emitter -Base Voltage  
Collector Current Continuous  
Power Dissipation Ta=25 degC  
Derate Above 25 deg C  
Power Dissipation Tc=25 degC  
Derate Above 25 deg C  
VCEO  
VCBO  
VEBO  
IC  
300  
300  
5.0  
500  
625  
5.0  
1.5  
12  
V
V
V
mA  
mW  
PD  
mW/deg C  
W
mW/deg C  
deg C  
PD  
Operating And Storage Junction  
Temperature Range  
Tj, Tstg  
-55 to +150  
THERMAL RESISTANCE  
Junction to Case  
Junction to Ambient  
Rth(j-c)  
Rth(j-a)  
83.3  
200  
deg C/W  
deg C/W  
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)  
DESCRIPTION  
SYMBOL TEST CONDITION  
MIN  
300  
300  
5.0  
-
TYP  
MAX  
-
-
-
250  
100  
-
-
-
UNIT  
V
V
V
nA  
nA  
Collector -Emitter Voltage  
Collector -Base Voltage  
Emitter-Base of Voltage  
Collector-Cut off Current  
Emitter-Cut off Current  
DC Current Gain  
VCEO*  
VCBO  
VEBO  
ICBO  
IEBO  
IC=1mA,IB=0  
IC=100uA.IE=0  
IE=10uA, IC=0  
VCB=200V, IE=0  
VEB=3V, IC=0  
-
-
-
-
-
-
-
-
-
-
-
hFE*  
IC=1mA,VCE=10V  
IC=10mA,VCE=10V  
IC=30mA,VCE=10V  
25  
40  
25  
-
Collector Emitter Saturation Voltage VCE(Sat)* IC=20mA,IB=2mA  
Base Emitter Saturation Voltage  
0.50  
0.9  
V
V
VBE(Sat) * IC=20mA,IB=2mA  
-
Dynamic Characteristics  
Transition Frequency  
ft  
VCE=20V,IC=10mA,  
f=100MHz  
VCB=20V, IE=0  
f=1MHz  
50  
-
-
-
-
MHz  
pF  
Collector Base Capacitance  
Ccb  
6.0  
*Pulse Test: Pulse Width=300us, Duty Cycle=2%  

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