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BC559C

更新时间: 2024-11-26 14:53:39
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
3页 313K
描述
30V,100mA,500mW Through-Hole Transistor-Small Signal (<=1A) PNP Low Noise

BC559C 数据手册

 浏览型号BC559C的Datasheet PDF文件第2页浏览型号BC559C的Datasheet PDF文件第3页 
BC559C  
www.centralsemi.com  
SILICON  
PNP TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR BC559C is a  
silicon PNP small signal transistor, manufactured by  
the epitaxial planar process, designed for general  
purpose amplifier applications.  
MARKING: FULL PART NUMBER  
TO-92-18R CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
30  
30  
CBO  
V
V
V
CEV  
CEO  
EBO  
V
V
30  
5.0  
V
Continuous Collector Current  
Peak Collector Current  
Peak Base Current  
I
100  
mA  
mA  
mA  
mA  
mW  
°C  
C
I
200  
CM  
I
200  
BM  
EM  
P
Peak Emitter Current  
I
200  
Power Dissipation  
500  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
250  
J
stg  
Θ
Θ
°C/W  
°C/W  
JA  
JC  
Thermal Resistance  
150  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
V
=20V  
15  
nA  
CBO  
CBO  
CB  
CB  
I
V
=20V, T =150°C  
4.0  
μA  
V
A
BV  
BV  
BV  
BV  
I =100μA  
30  
30  
30  
5.0  
CBO  
CEV  
C
I =100μA  
V
C
I =10mA  
V
CEO  
C
I =10μA  
V
EBO  
E
V
V
V
I =10mA, I =0.5mA  
300  
650  
750  
800  
mV  
mV  
mV  
CE(SAT)  
CE(SAT)  
BE(ON)  
FE  
C
B
I =100mA, I =5.0mA  
C
B
V
=5.0V, I =2.0mA  
600  
420  
CE  
CE  
CE  
CB  
CE  
C
h
V
V
V
V
=5.0V, I =2.0mA  
C
f
=5.0V, I =10mA, f=35MHz  
150  
4.5  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
E
ob  
NF  
=5.0V, I =0.2mA, R =2.0kΩ,  
C
G
B=200Hz, f=1.0kHz  
1.0  
4.0  
dB  
R0 (19-June 2018)  

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