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BC558BTAR PDF预览

BC558BTAR

更新时间: 2024-11-04 13:05:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
3页 72K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, LEAD FREE, TO-92, 3 PIN

BC558BTAR 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.61Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):200
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:PNP最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

BC558BTAR 数据手册

 浏览型号BC558BTAR的Datasheet PDF文件第2页浏览型号BC558BTAR的Datasheet PDF文件第3页 
PNP EPITAXIAL  
BC556/557/558/559/560  
SILICON TRANSISTOR  
SWITCHING AND AMPLIFIER  
· HIGH VOLTAGE: BC556, VCEO= -65V  
· LOW NOISE: BC559, BC560  
TO-92  
· Complement to BC546 ... BC 550  
ABSOLUTE MAXIMUM RATINGS (TA=25°C)  
Characteristic  
Symbol  
VCBO  
Rating  
Unit  
Collector-Base Capacitance  
: BC556  
-80  
-50  
-30  
V
V
V
: BC557/560  
: BC558/559  
Collector-Emitter Voltage  
: BC556  
VCEO  
-65  
-45  
V
V
: BC557/560  
: BC558/559  
-30  
-5  
-100  
500  
150  
V
V
mA  
mW  
°C  
°C  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
VEBO  
IC  
PC  
TJ  
TSTG  
-65 ~ 150  
1. Collector 2. Base 3. Emitter  
ELECTRICAL CHARACTERISTICS (TA=25°C)  
Characteristic  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
ICBO  
hFE  
VCE (sat)  
Collector Cut-off Current  
DC Current Gain  
Collector Emitter Saturation Voltage  
VCB= -30V, IE=0  
VCE= -5V, IC=2mA  
-15  
800  
-300  
-650  
nA  
110  
IC= -10mA, IB= -0.5mA  
IC= -100mA, IB= -5mA  
IC= -10mA, IB= -0.5mA  
IC= -100mA, IB= -5mA  
VCE= -5V, IC= -2mA  
VCE= -5V, IC= -10mA  
VCE= -5V, IC= -10mA  
-90  
-250  
-700  
-900  
-660  
mV  
mV  
mV  
mV  
mV  
mV  
MHz  
VBE (on)  
VBE (on)  
fT  
Collector Base Saturation Voltage  
Base Emitter On Voltage  
-750  
-800  
-600  
150  
Current Gain Bandwidth Product  
Collector Base Capacitance  
CCBO  
NF  
VCB= -10V, f=1MHz  
VCE= -5V, IC= -200mA  
f=1KHz, RG=2KW  
VCE= -5V, IC= -200mA  
RG=2KW  
6
10  
4
pF  
dB  
dB  
2
1
Noise Figure  
: BC556/557/558  
: BC559/560  
dB  
dB  
1.2  
1.2  
NF  
4
2
: BC559  
: BC560  
f=30~15000MHz  
hFE CLASSIFICATION  
Classification  
A
B
C
hFE  
110-220  
200-450  
420-800  
Rev. B  
ã
1999 Fairchild Semiconductor Corporation  

BC558BTAR 替代型号

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