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BC558C PDF预览

BC558C

更新时间: 2024-11-15 22:48:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
4页 44K
描述
NPN EPITAXIAL SILICON TRANSISTOR

BC558C 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.08
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):420
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:PNP最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

BC558C 数据手册

 浏览型号BC558C的Datasheet PDF文件第2页浏览型号BC558C的Datasheet PDF文件第3页浏览型号BC558C的Datasheet PDF文件第4页 
BC546/547/548/549/550  
Switching and Applications  
High Voltage: BC546, V  
Low Noise: BC549, BC550  
Complement to BC556 ... BC560  
=65V  
CEO  
TO-92  
1. Collector 2. Base 3. Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage : BC546  
80  
50  
30  
V
V
V
CBO  
: BC547/550  
: BC548/549  
Collector-Emitter Voltage : BC546  
65  
45  
30  
V
V
V
CEO  
EBO  
: BC547/550  
: BC548/549  
Emitter-Base Voltage  
Collector Current (DC)  
: BC546/547  
: BC548/549/550  
6
5
V
V
I
100  
500  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
C
T
T
150  
J
-65 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
15  
Units  
I
V
V
=30V, I =0  
nA  
CBO  
CB  
CE  
E
h
=5V, I =2mA  
110  
800  
FE  
C
V
V
V
(sat) Collector-Emitter Saturation Voltage I =10mA, I =0.5mA  
90  
200  
250  
600  
mV  
mV  
CE  
BE  
BE  
C
B
I =100mA, I =5mA  
C
B
(sat)  
(on)  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I =10mA, I =0.5mA  
700  
900  
mV  
mV  
C
B
I =100mA, I =5mA  
C
B
V
=5V, I =2mA  
580  
660  
700  
720  
mV  
mV  
CE  
CE  
C
V
V
V
V
V
=5V, I =10mA  
C
f
Current Gain Bandwidth Product  
Output Capacitance  
=5V, I =10mA, f=100MHz  
300  
3.5  
9
MHz  
pF  
T
CE  
CB  
EB  
CE  
C
C
C
=10V, I =0, f=1MHz  
6
ob  
ib  
E
Input Capacitance  
=0.5V, I =0, f=1MHz  
pF  
C
NF  
Noise Figure  
: BC546/547/548  
: BC549/550  
: BC549  
=5V, I =200µA  
2
10  
4
4
dB  
dB  
dB  
dB  
C
f=1KHz, R =2KΩ  
1.2  
1.4  
1.4  
G
V
=5V, I =200µA  
CE  
C
: BC550  
R =2K, f=30~15000MHz  
3
G
h
Classification  
FE  
Classification  
A
B
C
h
110 ~ 220  
200 ~ 450  
420 ~ 800  
FE  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, August 2002  

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