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BC558C

更新时间: 2024-11-28 04:08:55
品牌 Logo 应用领域
WEITRON 晶体晶体管
页数 文件大小 规格书
2页 100K
描述
PNP General Purpose Transistor

BC558C 数据手册

 浏览型号BC558C的Datasheet PDF文件第2页 
BC556 ... BC559  
BC556 ... BC559  
General Purpose Si-Epitaxial PlanarTransistors  
Si-Epitaxial Planar-Transistoren für universellen Einsatz  
PNP  
PNP  
Version 2006-05-31  
Power dissipation – Verlustleistung  
Plastic case  
Kunststoffgehäuse  
500 mW  
TO-92  
(10D3)  
C B E  
Weight approx. – Gewicht ca.  
0.18 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
2 x 2.54  
Standard packaging taped in ammo pack  
Standard Lieferform gegurtet in Ammo-Pack  
Dimensions - Maße [mm]  
Maximum ratings (TA = 25°C)  
Grenzwerte (TA = 25°C)  
BC556  
80 V  
BC557  
50 V  
BC558/559  
30 V  
Collector-Emitter-voltage  
E-B short - VCES  
Collector-Emitter-voltage  
B open  
E open  
C open  
- VCEO  
- VCBO  
- VEB0  
Ptot  
65 V  
45 V  
30 V  
Collector-Base-voltage  
80 V  
50 V  
30 V  
Emitter-Base-voltage  
5 V  
Power dissipation – Verlustleistung  
Collector current – Kollektorstrom (dc)  
Peak Collector current – Kollektor-Spitzenstrom  
Peak Base current – Basis-Spitzenstrom  
Peak Emitter current – Emitter-Spitzenstrom  
500 mW 1)  
100 mA  
200 mA  
200 mA  
200 mA  
- IC  
- ICM  
- IBM  
IEM  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-55...+150°C  
-55…+150°C  
Characteristics (Tj = 25°C)  
Kennwerte (Tj = 25°C)  
Group A  
Group B  
Group C  
DC current gain – Kollektor-Basis-Stromverhältnis 2)  
- VCE = 5 V, - IC = 10 µA  
hFE  
hFE  
hFE  
typ. 90  
110 ... 220  
typ. 120  
typ. 150  
200 ... 450  
typ. 200  
typ. 270  
420 ... 800  
typ. 400  
- VCE = 5 V, - IC = 2 mA  
- VCE = 5 V, - IC = 100 mA  
h-Parameters at/bei - VCE = 5 V, - IC = 2 mA, f = 1 kHz  
Small signal current gain  
Kleinsignal-Stromverstärkung  
hfe  
typ. 220  
typ. 330  
typ. 600  
Input impedance – Eingangs-Impedanz  
hie  
1.6 ... 4.5 k3.2 ...8.5 kΩ  
6 ... 15 kΩ  
Output admittance – Ausgangs-Leitwert  
hoe  
hre  
18 < 30 µS  
30 < 60 µS  
60 < 110 µS  
Reverse voltage transfer ratio  
Spannungsrückwirkung  
typ. 1.5*10-4  
typ. 2*10-4  
typ. 3*10-4  
1
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case  
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1

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