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BC559BTA

更新时间: 2024-11-25 21:07:07
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
10页 382K
描述
PNP Epitaxial Silicon Transistor, 2000-FNFLD

BC559BTA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95Factory Lead Time:1 week
风险等级:1.19其他特性:LOW NOISE
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):200
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

BC559BTA 数据手册

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BC559BTA 替代型号

型号 品牌 替代类型 描述 数据表
BC558BTA ONSEMI

完全替代

Amplifier Transistors, 2000-FNFLD
BC559BTA FAIRCHILD

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