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BC328 PDF预览

BC328

更新时间: 2024-11-20 22:48:15
品牌 Logo 应用领域
德欧泰克 - DIOTEC 晶体晶体管开关
页数 文件大小 规格书
2页 87K
描述
Si-Epitaxial PlanarTransistors

BC328 数据手册

 浏览型号BC328的Datasheet PDF文件第2页 
BC 327 / BC 328  
PNP  
General Purpose Transistors  
PNP  
Si-Epitaxial PlanarTransistors  
Power dissipation – Verlustleistung  
625 mW  
Plastic case  
TO-92  
(10D3)  
Kunststoffgehäuse  
Weight approx. – Gewicht ca.  
0.18 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
Standard packaging taped in ammo pack  
Standard Pinning  
Standard Lieferform gegurtet in Ammo-Pack  
1 = C 2 = B 3 = E  
Maximum ratings (TA = 25C)  
Grenzwerte (TA = 25C)  
BC 327  
45 V  
50 V  
BC 328  
25 V  
30 V  
Collector-Emitter-voltage  
Collector-Emitter-voltage  
Emitter-Base-voltage  
B open  
B shorted - VCES  
C open  
- VCE0  
- VEB0  
Ptot  
- IC  
- ICM  
- IB  
Tj  
5 V  
Power dissipation – Verlustleistung  
625 mW 1)  
800 mA  
1 A  
Collector current – Kollektorstrom (DC)  
Peak Coll. current – Kollektor-Spitzenstrom  
Base current – Basisstrom  
Junction temp. – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
100 mA  
150C  
- 65…+ 150C  
TS  
Characteristics, Tj = 25C  
Kennwerte, Tj = 25C  
Min.  
Typ.  
Max.  
DC current gain – Kollektor-Basis-Stromverhältnis  
Group -16  
Group -25  
Group -40  
Group -16  
Group -25  
Group -40  
hFE  
hFE  
hFE  
hFE  
hFE  
hFE  
100  
160  
250  
60  
100  
170  
160  
250  
400  
130  
200  
320  
250  
400  
630  
- VCE = 1 V, - IC = 100 mA  
- VCE = 1 V, - IC = 300 mA  
1
)
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case  
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden  
2
01.11.2003  

BC328 替代型号

型号 品牌 替代类型 描述 数据表
BC559B DIOTEC

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Si-Epitaxial PlanarTransistors
BC328-25 DIOTEC

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Si-Epitaxial PlanarTransistors
BC328-16 DIOTEC

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Si-Epitaxial PlanarTransistors

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TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 800MA I(C) | TO-226AA
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