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BC328_00 PDF预览

BC328_00

更新时间: 2024-11-21 08:49:23
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页数 文件大小 规格书
2页 339K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

BC328_00 数据手册

 浏览型号BC328_00的Datasheet PDF文件第2页 
SEMICONDUCTOR  
BC328  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
GENERAL PURPOSE APPLICATION.  
SWITCHING APPLICATION.  
B
C
FEATURES  
High Current : IC=-800mA.  
DC Current Gain : hFE=100 630 (VCE=-1V, Ic=-100mA).  
For Complementary with NPN type BC338.  
DIM MILLIMETERS  
N
A
B
C
D
E
4.70 MAX  
4.80 MAX  
3.70 MAX  
0.45  
E
K
D
G
1.00  
F
1.27  
G
H
J
0.85  
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
0.45  
_
H
14.00 +0.50  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
-30  
UNIT  
V
K
L
0.55 MAX  
2.30  
F
F
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
M
N
0.45 MAX  
1.00  
3
1
2
-25  
V
1. COLLECTOR  
2. BASE  
-5  
V
Collector Current  
-800  
800  
mA  
mA  
mW  
3. EMITTER  
IE  
Emitter Current  
PC  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature Range  
625  
TO-92  
Tj  
150  
Tstg  
-55 150  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut-off Current  
SYMBOL  
ICBO  
hFE  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
-100  
630  
-0.7  
-1.2  
-
UNIT  
nA  
VCB=-25V, IE=0  
-
-
-
VCE=-1V, IC=-100mA  
IC=-500mA, IB=-50mA  
VCE=-1V, IC=-300mA  
DC Current Gain (Note)  
Collector-Emitter Saturation Voltage  
Base-Emitter Voltage  
100  
VCE(sat)  
VBE(ON)  
fT  
-
-
-
-
-
V
V
-
VCE=-5V, IC=-10mA, f=100MHz  
VCB=-10V, f=1MHz, IE=0  
Transition Frequency  
100  
16  
MHz  
pF  
Cob  
Collector Output Capacitance  
-
Note : hFE Classification none:100 630, 16:100 250, 25:160 400, 40:250 630  
2000. 2. 28  
Revision No : 2  
1/2  

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