Datasheet > BC328_00

BC328_00

更新时间： 2022-10-15 01:11:06

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2页	339K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

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数据手册

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BC328_00 数据手册

SEMICONDUCTOR

BC328

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

High Current : I_C=-800mA.

DC Current Gain : h_FE=100 630 (V_CE=-1V, I_c=-100mA).

For Complementary with NPN type BC338.

DIM MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

0.45

14.00 +0.50

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

-30

UNIT

0.55 MAX

2.30

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

0.45 MAX

1.00

-25

1. COLLECTOR

2. BASE

-5

Collector Current

-800

800

3. EMITTER

I_E

Emitter Current

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

625

TO-92

T_j

150

T_stg

-55 150

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

h_FE

TEST CONDITION

MIN.

TYP.

MAX.

-100

630

-0.7

-1.2

UNIT

V_CB=-25V, I_E=0

V_CE=-1V, I_C=-100mA

I_C=-500mA, I_B=-50mA

V_CE=-1V, I_C=-300mA

DC Current Gain (Note)

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

100

V_CE(sat)

V_BE(ON)

f_T

V_CE=-5V, I_C=-10mA, f=100MHz

V_CB=-10V, f=1MHz, I_E=0

Transition Frequency

100

MHz

C_ob

Collector Output Capacitance

Note : h_FEClassification none:100 630, 16:100 250, 25:160 400, 40:250 630

2000. 2. 28

Revision No : 2

1/2

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