BC327/328
Switching and Amplifier Applications
•
•
Suitable for AF-Driver stages and low power output stages
Complement to BC337/BC338
TO-92
1. Collector 2. Base 3. Emitter
1
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Value
Units
V
V
V
Collector-Emitter Voltage
: BC327
: BC328
Collector-Emitter Voltage
CES
-50
-30
V
V
CEO
EBO
: BC327
: BC328
-45
-25
V
V
Emitter-Base Voltage
-5
-800
V
I
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
mA
mW
°C
C
P
625
C
T
T
150
J
-55 ~ 150
°C
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
BV
BV
Collector-Emitter Breakdown Voltage I = -10mA, I =0
CEO
CES
EBO
C
B
: BC327
: BC328
-45
-25
V
V
Collector-Emitter Breakdown Voltage I = -0.1mA, V =0
C
BE
: BC327
: BC328
-50
-30
V
V
Emitter-Base Breakdown Voltage
IE= -10µA, I =0
-5
V
C
I
Collector Cut-off Current
: BC307
CES
V
V
= -45V, V =0
= -25V, V =0
BE
-2
-2
-100
-100
nA
nA
CE
CE
BE
: BC338
h
h
DC Current Gain
V
V
= -1V, I = -100mA
100
40
630
FE1
FE2
CE
CE
C
= -1V, I = -300mA
C
V
V
(sat) Collector-Emitter Saturation Voltage
(on) Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
I = -500mA, I = -50mA
-0.7
-1.2
V
V
CE
C
B
V
= -1V, I = -300mA
C
BE
CE
CE
CB
f
V
V
= -5V, I = -10mA, f=20MHz
100
12
MHz
pF
T
C
C
= -10V, I =0, f=1MHz
ob
E
h
Classification
FE
Classification
16
100 ~ 250
60-
25
40
h
h
160 ~ 400
100-
250 ~ 630
170-
FE1
FE2
©2000 Fairchild Semiconductor International
Rev. A, February 2000