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BC328-16-AP PDF预览

BC328-16-AP

更新时间: 2024-11-25 08:49:23
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管
页数 文件大小 规格书
3页 304K
描述
PNP Plastic-Encapsulate Transistors

BC328-16-AP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.58最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):260 MHz
Base Number Matches:1

BC328-16-AP 数据手册

 浏览型号BC328-16-AP的Datasheet PDF文件第2页浏览型号BC328-16-AP的Datasheet PDF文件第3页 
BC327-16/25/40  
BC328-16/25/40  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
PNP  
Plastic-Encapsulate  
Transistors  
xꢀ Capable of 0.625Watts of Power Dissipation.  
xꢀ Collector-current : -0.8A  
xꢀ Collector-base Voltage :VCBO=-50V(BC327) , VCBO=-30V(BC328)  
x
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL rating 1  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
Compliant. See ordering information)  
Maximum Ratings  
xꢀ Storage temperature : -55к to +150к  
TO-92  
xꢀ Operating temperature : -55к to +150к  
A
E
Electrical Characteristics @ 25к Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
B
V(BR)CEO  
Collector-Emitter Breakdown Voltage  
BC327  
BC328  
---  
Vdc  
(IC=-10mAdc, IB=0)  
-45  
-25  
V(BR)CBO  
Collector-Base Breakdown Voltage  
(IC=-100µAdc, IE=0) BC327  
BC328  
---  
---  
Vdc  
-50  
-30  
-5.0  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage  
(IE=-10µAdc, IC=0)  
Vdc  
Collector Cutoff Current  
µAdc  
C
(VCB=-45Vdc,IE=0)  
(VCB=-25Vdc,IE=0)  
Collector Cutoff Current  
(VCE=-40Vdc,IB=0)  
(VCE=-20Vdc,IB=0)  
Emitter Cutoff Current  
(VEB=-4.0Vdc, IC=0)  
BC327  
BC328  
---  
---  
-0.1  
-0.1  
ICEO  
µAdc  
µAdc  
BC327  
BC328  
---  
---  
---  
-0.2  
-0.2  
-0.1  
IEBO  
2
1
3
ON CHARACTERISTICS  
D
hFE(1)  
hFE(2)  
VCE(sat)  
VBE(sat)  
DC Current Gain  
(IC=-100mAdc, VCE=-1.0Vdc)  
DC Current Gain  
(IC=-300mAdc, VCE=-1.0Vdc)  
100  
630  
---  
1.COLLECTOR  
2.BASE  
40  
---  
---  
---  
Collector-Emitter Saturation Voltage  
(IC=-500mAdc, IB=-50mAdc)  
-0.7  
Vdc  
3.EMITTER  
Base-Emitter Saturation Voltage  
(IC=-500mAdc,IB=-50mAdc)  
---  
-1.2  
---  
Vdc  
G
SMALL SIGNAL CHARACTERISTICS  
fT  
Current-Gain-Bandwidth Product  
(VCE=5.0V, f=100MHz, IC=10mA)  
260  
MHz  
DIMENSIONS  
MM  
INCHES  
MIN  
.170  
.170  
.550  
.010  
.130  
.010  
hFE CLASSIFICATION  
Classification  
hFE(1)  
DIM  
A
B
C
D
MAX  
MIN  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
16  
25  
40  
.190  
.190  
.590  
.020  
.160  
.104  
100~250  
A 011  
160~400  
B 011  
250~630  
Marking Code  
C 011  
E
G
www.mccsemi.com  
Revision: 6  
2008/08/27  
1 of 3  

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