Datasheet > BC328-16/E6

BC328-16/E6

更新时间： 2024-01-16 14:53:14

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	222K
描述
TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 800MA I(C) \| TO-226AA

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技术参数
数据手册

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BC328-16/E6 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
最大集电极电流 (IC)：	0.8 A	配置：	Single
最小直流电流增益 (hFE)：	60	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.625 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

BC328-16/E6 数据手册

BC327 thru BC328

Vishay Semiconductors

formerly General Semiconductor

Small Signal Transistors (PNP)

TO-226AA (TO-92)

Features

• PNP Silicon Epitaxial Planar Transistors for switching

and amplifier applications. Especially suitable for

AF-driver stages and low-power output stages.

0.142 (3.6)

0.181 (4.6)

• These types are also available subdivided into

three groups, -16, -25, and -40, according to their

DC current gain. As complementary types, the NPN

transistors BC327 and BC338 are recommended.

• On special request, these transistors are also

manufactured in the pin configuration TO-18.

Mechanical Data

Case: TO-92 Plastic Package

Weight: approx. 0.18g

max.

0.022 (0.55)

Packaging Codes/Options:

E6/Bulk – 5K per container, 20K/box

E7/4K per Ammo mag., 20K/box

0.098 (2.5)

Dimensions in inches

and (millimeters)

Bottom

View

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

Value

Unit

BC327

BC328

Collector-Emitter Voltage

–V_CES

BC327

BC328

Collector-Emitter Voltage

–V_CEO

Emitter-Base Voltage

–V_EBO

–I_C

800

Collector Current

Peak Collector Current

–I_CM

–I_B

Base Current

100

°C/W

°C

Power Dissipation at Tamb = 25°C

Thermal Resistance Junction to Ambient Air

Junction Temperature

P_tot

R_ΘJA

T_j

625⁽¹⁾

200⁽¹⁾

150

Storage Temperature Range

T_S

–65 to +150

°C

Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.

Document Number 88158

08-May-02

www.vishay.com

12 3 4 5

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