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BC328/E7 PDF预览

BC328/E7

更新时间: 2024-11-24 23:34:39
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
5页 222K
描述
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 800MA I(C) | TO-226AA

BC328/E7 数据手册

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BC327 thru BC328  
Vishay Semiconductors  
formerly General Semiconductor  
Small Signal Transistors (PNP)  
TO-226AA (TO-92)  
Features  
• PNP Silicon Epitaxial Planar Transistors for switching  
and amplifier applications. Especially suitable for  
AF-driver stages and low-power output stages.  
0.142 (3.6)  
0.181 (4.6)  
• These types are also available subdivided into  
three groups, -16, -25, and -40, according to their  
DC current gain. As complementary types, the NPN  
transistors BC327 and BC338 are recommended.  
• On special request, these transistors are also  
manufactured in the pin configuration TO-18.  
Mechanical Data  
Case: TO-92 Plastic Package  
Weight: approx. 0.18g  
max.  
0.022 (0.55)  
Packaging Codes/Options:  
E6/Bulk 5K per container, 20K/box  
E7/4K per Ammo mag., 20K/box  
0.098 (2.5)  
Dimensions in inches  
and (millimeters)  
Bottom  
View  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
Value  
Unit  
BC327  
BC328  
50  
30  
Collector-Emitter Voltage  
VCES  
V
BC327  
BC328  
45  
25  
Collector-Emitter Voltage  
VCEO  
V
Emitter-Base Voltage  
VEBO  
IC  
5
800  
V
mA  
A
Collector Current  
Peak Collector Current  
ICM  
IB  
1
Base Current  
100  
mA  
mW  
°C/W  
°C  
Power Dissipation at Tamb = 25°C  
Thermal Resistance Junction to Ambient Air  
Junction Temperature  
Ptot  
RΘJA  
Tj  
625(1)  
200(1)  
150  
Storage Temperature Range  
TS  
65 to +150  
°C  
Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.  
Document Number 88158  
08-May-02  
www.vishay.com  
1

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