General Purpose Transistors
BC 327 / BC 328
Characteristics (Tj = 25ꢀC)
Kennwerte (Tj = 25ꢀC)
Min.
Typ.
Max.
Collector-Emitter cutoff current – Kollektorreststrom
- VCE = 45 V
- VCE = 25 V
- VCE = 45 V, Tj = 125ꢀC
- VCE = 25 V, Tj = 125ꢀC
BC 327
BC 328
BC 327
BC 328
- ICES
- ICES
- ICES
- ICES
–
–
–
–
2 nA
2 nA
–
100 nA
100 nA
10 ꢀA
10 ꢀA
–
Collector-Emitter breakdown voltage
Collector-Emitter Durchbruchspannung
BC 327
- V(BR)CES
- V(BR)CES
- V(BR)CES
- V(BR)CES
20 V
45 V
30 V
50 V
–
–
–
–
–
–
–
–
- IC = 10 mA
- IC = 0.1 mA
BC 328
BC 327
BC 328
Emitter-Base breakdown voltage
Emitter-Basis-Durchbruchspannung
- IE = 0.1 mA
- V(BR)EB0
5 V
–
–
–
Collector saturation volt. – Kollektor-Sättigungsspannung
- IC = 500 mA, - IB = 50 mA
Base-Emitter voltage – Basis-Emitter-Spannung
- VCE = 1 V, - IC = 300 mA
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 50 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCEsat
- VBE
fT
–
–
0.7 V
1.2 V
–
–
–
100 MHz
12 pF
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
–
–
Thermal resistance junction to ambient air
RthA
200 K/W 1)
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC 337 / BC 338
Available current gain groups per type
BC 327-16 BC 327-25
BC 328-16 BC 328-25
BC327-40
BC328-40
Lieferbare Stromverstärkungsgruppen pro Typ
1
)
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
01.11.2003
3