生命周期: | Obsolete | 包装说明: | R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.12 |
配置: | SINGLE | 最小二极管电容比: | 8 |
二极管元件材料: | SILICON | 二极管类型: | VARIABLE CAPACITANCE DIODE |
频带: | VERY HIGH FREQUENCY | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BBY42 | NXP |
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VHF variable capacitance diode | |
BBY42 | YAGEO |
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Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, Silicon | |
BBY42212 | NXP |
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暂无描述 | |
BBY42235 | NXP |
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DIODE VHF-UHF BAND, 24 pF, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode | |
BBY42-T | NXP |
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DIODE VHF BAND, 24 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB, PLASTIC, SMD, | |
BBY42T/R | NXP |
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DIODE VHF BAND, 24 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB, PLASTIC, SMD, | |
BBY42TRL | NXP |
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DIODE VHF BAND, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode | |
BBY42TRL | YAGEO |
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Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, Silicon | |
BBY42TRL13 | YAGEO |
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Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, Silicon | |
BBY51 | INFINEON |
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Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage |