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BBY52-02W PDF预览

BBY52-02W

更新时间: 2024-11-15 22:10:19
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
3页 16K
描述
Silicon Tuning Diode (High Q hyperband tuning diode Low series inductance)

BBY52-02W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-F2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.17其他特性:LOW INDUCTANCE
最小击穿电压:7 V配置:SINGLE
二极管电容容差:22.22%最小二极管电容比:1.1
标称二极管电容:1.85 pF二极管元件材料:SILICON
二极管类型:VARIABLE CAPACITANCE DIODEJESD-30 代码:R-PDSO-F2
湿度敏感等级:1元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:7 V子类别:Varactors
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
变容二极管分类:HYPERABRUPTBase Number Matches:1

BBY52-02W 数据手册

 浏览型号BBY52-02W的Datasheet PDF文件第2页浏览型号BBY52-02W的Datasheet PDF文件第3页 
BBY 52-02W  
Silicon Tuning Diode  
Preliminary data  
High Q hyperband tuning diode  
Low series inductance  
2
Designed for low tuning voltage operation  
For VCO’s in mobile communications equipment  
1
VES05991  
Type  
Marking Ordering Code  
Q62702-B0860  
Pin Configuration  
Package  
BBY 52-02W  
K
1 = C  
2 = A  
SCD-80  
Maximum Ratings  
Parameter  
Symbol  
Value  
7
Unit  
V
Diode reverse voltage  
Forward current  
V
R
20  
mA  
I
F
Operating temperature range  
Storage temperature  
-55 ...+150  
°C  
T
T
op  
-55 ...+150  
stg  
Semiconductor Group  
Semiconductor Group  
1
Jul-23-1998  
1998-11-01  
1

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