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BBY52E6327 PDF预览

BBY52E6327

更新时间: 2024-11-16 20:54:19
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管变容二极管
页数 文件大小 规格书
3页 70K
描述
Variable Capacitance Diode, 1.85pF C(T), 7V, Silicon, Hyperabrupt

BBY52E6327 技术参数

生命周期:Obsolete包装说明:R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.15
最小击穿电压:7 V配置:COMMON CATHODE, 2 ELEMENTS
最小二极管电容比:1.1标称二极管电容:1.85 pF
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
JESD-30 代码:R-PDSO-G3元件数量:2
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
变容二极管分类:HYPERABRUPTBase Number Matches:1

BBY52E6327 数据手册

 浏览型号BBY52E6327的Datasheet PDF文件第2页浏览型号BBY52E6327的Datasheet PDF文件第3页 
BBY 52  
Silicon Tuning Diode  
3
High Q hyperabrupt dual tuning diode  
Designed for low tuning voltage operation  
For VCO's in mobile communications equipment  
2
1
VPS05161  
Type  
Marking  
Pin Configuration  
Package  
BBY 52  
S5s  
1 = A1  
2 = A2  
3 = C1/2 SOT-23  
Maximum Ratings  
Parameter  
Symbol  
Value  
7
Unit  
V
Diode reverse voltage  
V
R
Forward current  
20  
mA  
°C  
I
F
Operating temperature range  
Storage temperature  
-55 ... 150  
-55 ... 150  
T
op  
T
stg  
1
Oct-05-1999  

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