BAW56
Vishay Semiconductors
www.vishay.com
Small Signal Switching Diode, Dual
FEATURES
• Silicon epitaxial planar diode
• Fast switching dual diode with common anode
• AEC-Q101 qualified available
3
• Base P/N-E3 - RoHS-compliant, commercial
grade
1
2
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
ORDERING CODE
CIRCUIT CONFIGURATION
TYPE MARKING
REMARKS
BAW56-E3-08 or BAW56-E3-18
BAW56-HE3-08 or BAW56-HE3-18
BAW56
Common anode
JD
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Repetitive peak reverse voltage
= working peak reverse voltage
= DC blocking voltage
VR = VRRM
70
V
Forward continuous current
Non repetitive peak forward current
Power dissipation (1)
IF
250
2
mA
A
tp = 1 μs
tp = 1 ms
tp = 1 s
IFSM
IFSM
IFSM
Ptot
1
A
0.5
350
A
mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
RthJA
Tj
VALUE
430
UNIT
K/W
°C
Thermal resistance junction to ambient air
Junction temperature
150
Storage temperature range
Operating temperature range
Tstg
-65 to +150
-55 to +150
°C
Top
°C
Note
(1)
Device on fiberglass substrate, see layout
Rev. 2.1, 13-Feb-18
Document Number: 85549
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000