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BAW56-LFR PDF预览

BAW56-LFR

更新时间: 2024-02-07 22:57:22
品牌 Logo 应用领域
FRONTIER 二极管开关
页数 文件大小 规格书
2页 117K
描述
DUAL SURFACE MOUNT SWITCHING DIODE

BAW56-LFR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.58配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3元件数量:2
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.075 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.2 W最大重复峰值反向电压:75 V
最大反向恢复时间:0.004 µs表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BAW56-LFR 数据手册

 浏览型号BAW56-LFR的Datasheet PDF文件第2页 
Frontier Electronics Corp.  
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065  
TEL: (805) 522-9998 FAX: (805) 522-9989  
E-mail: frontiersales@frontierusa.com  
Web: http: //www.frontierusa.com  
DUAL SURFACE MOUNT SWITCHING DIODE  
A
BAW56-LFR  
DIM Min Max  
FEATURES  
z FAST SWITCHING  
z SURFACE MOUNT PACKAGE IDEALLY SUITED  
FOR AUTOMATIC INSERTION  
z HIGH CONDUCTANCE  
z LEAD FREE  
A
B
C
D
E
0.30 0.51  
1.20 1.60  
2.10 3.00  
0.85 1.05  
0.45 1.00  
1.70 2.10  
2.70 3.10  
0.00 0.13  
0.89 1.30  
0.30 0.61  
0.076 0.25  
3
B
C
1
2
1
2
D
3
G
H
J
K
L
E
G
MECHANICAL DATA  
z CASE: SOT-23, PLASTIC, DIMENSIONS IN MILLIMETERS  
z TERMINALS: SOLDERABLE PER MIL-STD-202, METHOD 208  
z POLARITY: SEE DIAGRAM  
H
M
K
M
J
z WEIGHT: 0.008 GRAMS  
L
RATINGS  
SYMBOL  
BAW56-LFR  
UNITS  
V
PEAK REPETITIVE REVERSE VOLTAGE  
WORKING PEAK REVERSE VOLTAGE  
DC BLOCKING VOLTAGE  
VRRM  
VRWM  
VR  
70  
IFM  
300  
mAdc  
FORWARD CONTINUOUS CURRENT (NOTE 1)  
RECTIFIED CURRENTAVERAGE,HALF WAVE  
RECTIFICATION WITH RESIST LOAD  
AT Tamb25°C AND 50MHZ (NOTE 1)  
PEAK FORWARD SURGE CURRENT @ t=1.0 S  
@ t=1.0 μ S  
IO  
150  
mA  
A
1.0  
2.0  
IFM(surge)  
TOTAL DEVICE DISSIPATION FR-5 BOARDNOTE 1)  
350  
2.8  
mW  
mW/°C  
PD  
RΘ JA  
PD  
DERATE ABOVE 25°C  
THERMAL RESISTANCE JUNCTION TO AMBIENT  
357  
°C / W  
TOTAL DEVICE DISSIPATION ALUMINA SUBSTRATE (NOTE 2)  
DERATE ABOVE 25°C  
350  
2.8  
mW  
mW/°C  
JUNCTION TEMPERATURE  
STORAGE TEMPERATURE RANGE  
MARKING  
TJ  
- 55 TO + 150  
- 55 TO + 150  
A1  
°C  
°C  
TS  
ELECTRONICAL CHARACTERISTICS @ TA=25°C UNLESS OTHERWISE SPECIFIED  
CHARACTERISTICS  
SYMBOL  
Min.  
Max.  
Unit  
Test Condition  
715  
855  
1.0  
1.25  
2.5  
mV  
mV  
V
IF =1.0 mA  
IF =10 mA  
IF =50 mA  
IF =150 mA  
VR=70Vdc  
-
MAXIMUM FORWARD VOLTAGE  
VF  
V
IR  
50  
100  
μ A  
VR=25Vdc, TJ=150°C  
VR=70Vdc, TJ=150°C  
-
MAXIMUM PEAK REVERSE CURRENT  
CJ  
CAPACITANCE  
4.0  
6.0  
pF  
nS  
VR=0, f=1.0MHZ  
-
-
IF=10mA to IRR=1.0 mA  
VR=6.0V , RL=100Ω  
REVERSE RECOVERY TIME  
TRR  
NOTE: 1. DIODE ON ALUMINA 10mm x 8 mm x 0.7mm  
BAW56-LFR  
Page: 1  

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