BAW100GTR

更新时间： 2024-01-23 11:32:15

品牌	Logo	应用领域
CENTRAL		整流二极管开关测试光电二极管
页数	文件大小	规格书
2页	449K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BAW100GTR 数据手册

BAW100

BAW100G

www.centralsemi.com

SURFACE MOUNT

DUAL, ISOLATED HIGH SPEED

SILICON SWITCHING DIODES

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BAW100 and

BAW100G each consist of two electrically isolated high

speed silicon switching diodes packaged in an epoxy

molded SOT-143 surface mount case. This device is

designed for high speed switching applications.

The BAW100G is Halogen Free by design.

•

MARKING CODES:

BAW100: CJSS

BAW100G: CJSG

SOT-143 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Continuous Forward Current

RRM

250

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0ms

Peak Forward Surge Current, tp=1.0s

Power Dissipation

500

FRM

4.0

FSM

2.0

1.0

350

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

μA

V =25V, T =150°C

V =75V

1.0

V =75V, T =150°C

I =100μA

I =1.0mA

715

855

1.00

1.25

2.0

I =10mA

I =50mA

I =150mA

V =0, f=1.0MHz

I =I =10mA, R =100Ω, Rec. to 1.0mA

6.0

R4 (20-November 2009)

中文翻译

下载PDF

与BAW100GTR相关器件

型号	品牌	获取价格	描述	数据表
BAW100GTRPBFREE	CENTRAL	获取价格	Diode,
BAW100LEADFREE	CENTRAL	获取价格	Rectifier Diode, 2 Element, 0.25A, 85V V(RRM), Silicon, PLASTIC PACKAGE-3
BAW100TR	CENTRAL	获取价格	暂无描述
BAW100TRPBFREE	CENTRAL	获取价格	Diode,
BAW101	NEXPERIA	获取价格	High voltage double diodeProduction
BAW101	TYSEMI	获取价格	Electrically insulated high-voltage medium-speed diodes
BAW101	LGE	获取价格	High Voltage Double Diode
BAW101	INFINEON	获取价格	Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes)
BAW101	CENTRAL	获取价格	DUAL, ISOLATED HIGH VOLTAGE SWITCHING DIODES
BAW101	KEXIN	获取价格	Silicon Switching Diode Array