Datasheet > BAV70LT1

BAV70LT1

更新时间： 2024-11-18 12:54:39

品牌	Logo	应用领域
永而佳 - WINNERJOIN		二极管
页数	文件大小	规格书
2页	223K
描述
SOT-23 Plastic-Encapsulate Diodes

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中文翻译

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数据手册

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BAV70LT1 数据手册

RoHS

BAV70LT1

SOT-23 Plastic-Encapsulate Diodes

SOT-23

BAV70LT1 SWITCHING DIODE

FEATURES

Power dissipation

P_D:

225 mW(Tamb=25℃)

1.BASE

2.EMITTER

3.COLLECTOR

2.4

1.3

Forward Current

I_F:

Reverse Voltage

V_R:

200 mA

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +15℃

Unit:mm

Marking A4

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)

I_R

Test conditions

I_R= 100µA

MIN

MAX

UNIT

Reverse breakdown voltage

Reverse voltage leakage current

V_R=70V

2.5

µA

I_F=1mA

I_F=10mA

I_F=50mA

I_F=150mA

715

855

V_F

Forward voltage

1000

1250

WEJ ELECTRONIC CO.,LTD

C_D

V_R=0V,f=1MHz

1.5

Diode capacitance

I_F=I_R=10mA

I_R=1mA ,V_R=5V

R_C=100Ω

t _{r r}

Reverse recovery time

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.,LTD

中文翻译

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