Datasheet > BAV70QB-Q

BAV70QB-Q

更新时间： 2024-05-23 22:22:12

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	237K
描述
Dual common cathode high-speed switching diodeProduction

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BAV70QB-Q 数据手册

BAV70QB-Q

Dual common cathode high-speed switching diode

13 March 2024

Product data sheet

1. General description

Dual common cathode high-speed switching diode encapsulated in an ultra small DFN1110D-3

(SOT8015, JEDEC MO340-BA) Surface-Mounted Device (SMD) plastic package with visible and

solderable side pads.

2. Features and benefits

•

High switching speed: t_rr≤ 4 ns

•

Low leakage current: I_R≤ 0.5 µA

Reverse voltage V_R≤ 100 V

Low capacitance C_d≤ 1.5 pF

Ultra small SMD plastic package

Low package height of 0.5 mm

Suitable for Automatic Optical Inspection (AOI) of solder joint

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

High-speed switching

General-purpose switching

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

I_F

forward current

reverse voltage

reverse current

single diode loaded; T_amb= 25 °C

T_j= 25 °C

[1]

350

100

0.5

V_R

I_R

t_rr

V_R= 80 V; T_j= 25 °C

µA

reverse recovery time I_F= 10 mA; I_R= 10 mA; I_R(meas)= 1 mA;

R_L= 100 Ω; T_amb= 25 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

12 3 4 5 6 7...11

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