Datasheet > BAV70Q68000-A6622

BAV70Q68000-A6622

更新时间： 2024-01-02 17:01:40

品牌	Logo	应用领域
其他 - ETC		二极管
页数	文件大小	规格书
4页	98K
描述
DIODE KLEINSIGNAL SMD

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中文翻译

获取价格

数据手册

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BAV70Q68000-A6622 数据手册

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Silicon Switching Diode Array

BAV 70

● For high-speed switching

● Common cathode

Package¹⁾

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

BAV 70

A4s

Q68000-A6622

SOT-23

Maximum Ratings per Diode

Parameter

Symbol

Values

Unit

Reverse voltage

Peak reverse voltage

Forward current

200

Surge forward current, t = 1 µs

IFS

4.5

Total power dissipation, T

= 35 ˚C

tot

250

˚C

Junction temperature

150

Storage temperature range

Tstg

– 65 … + 150

Thermal Resistance

Junction - ambient²⁾

th JA

th JS

≤ 600

≤ 460

K/W

Junction - soldering point

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm².

5.91

Semiconductor Group

164

12 3 4

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