Datasheet > BAV70S62Z

BAV70S62Z

更新时间： 2024-11-22 03:07:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
2页	33K
描述
Rectifier Diode, 2 Element, 0.2A, 70V V(RRM), Silicon

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BAV70S62Z 数据手册

BAV70 / 74

Connection Diagram

MARKING

BAV70

BAV74

SOT-23

Small Signal Diode

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_RRM

Maximum Repetitive Reverse Voltage

BAV70

BAV74

I_F(AV)

I_FSM

Average Rectified Forward Current

200

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

1.0

2.0

Pulse Width = 1.0 microsecond

Storage Temperature Range

-55 to +150

°C

T_stg

T_J

Operating Junction Temperature

150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

Parameter

Value

Units

P_D

Power Dissipation

Thermal Resistance, Junction to Ambient

350

357

R_θJA

°C/W

Electrical Characteristics T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Max Units

V_R

Breakdown Voltage

BAV70

BAV74

I_R= 100 µA

I = 100

V_F

Forward Voltage

I_F= 1.0 mA

I_F= 10 mA

I_F= 50 mA

I_F= 150 mA

I_F= 100 mA

715

855

1.0

1.25

1.0

5.0

100

BAV70

BAV74

BAV70

I_R

Reverse Current

V = 25 V, T = 150 C

V_R= 70 V

V_R= 70 V, T_A= 150°C

V_R= 50 V

µA

BAV74

V_R= 50 V, T_A= 150°C

C_T

t_rr

Tatal Capacitance

V_R= 0, f = 1.0 MHz

I_F= I_R= 10 mA, I_RR= 1.0 mA,

R_L= 100Ω

1.5

2.0

6.0

BAV70

BAV74

BAV70

Reverse Recovery Time

4.0

BAV74

I_F= I_R= 10 mA, I_RR= 1.0 mA,

R = 100

Ω

BAV70/74, Rev.

2001 Fairchild Semiconductor Corporation

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