Datasheet > BAV70S-Q

BAV70S-Q

更新时间： 2024-09-26 11:11:59

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	208K
描述
High-speed switching double diodeProduction

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BAV70S-Q 数据手册

BAV70S-Q

High-speed switching double diode

14 June 2021

Product data sheet

1. General description

High-speed switching double diode, encapsulated in a very small SOT363 (SC-88) Surface-

Mounted Device (SMD) plastic package.

2. Features and benefits

•

High switching speed: t_rr≤ 4 ns

•

Low capacitance: C_d≤ 1.5 pF

Low leakage current

Reverse voltage: V_R≤ 100 V

Very small SMD plastic package

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

High-speed switching

General-purpose switching

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

I_R

reverse current

reverse voltage

V_R= 80 V; T_amb= 25 °C

0.5

100

µA

V_R

t_rr

reverse recovery time I_F= 10 mA; I_R= 10 mA; I_R(meas)= 1 mA;

R_L= 100 Ω; T_amb= 25 °C

12 3 4 5 6 7...11

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