Datasheet > BAV70T

BAV70T

更新时间： 2024-11-21 06:41:31

品牌	Logo	应用领域
KEC		二极管光电二极管局域网
页数	文件大小	规格书
2页	38K
描述
SILICON EPITAXIAL PLANAR DIODE

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中文翻译

获取价格

数据手册

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BAV70T 数据手册

SEMICONDUCTOR

BAV70T

SILICON EPITAXIAL PLANAR DIODE

TECHNICAL DATA

ULTRA HIGH SPEED SWITCHING APPLICATION.

FEATURES

· Small Package

· Low Forward Voltage

: ESM.

MILLIMETERS

1.60+0.10

DIM

: V_F=0.9V (Typ.).

· Fast Reverse Recovery Time : t_rr=1.6ns(Typ.).

· Small Total Capacitance : C_T=0.9pF (Typ.).

0.85 0.10

0.70+0.10

0.27+0.10/-0.05

1.60 0.10

1.00 0.10

0.50

0.13+0.05

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

SYMBOL

V_RM

V_R

RATING

UNIT

Maximum (Peak) Reverse Voltage

Reverse Voltage

1. ANODE 1

2. ANODE 2

3. CATHODE

I_F

Continuous Forward Current

Surge Current (10ms)

150

I_FSM

P_D

Power Dissipation

200 *

150

℃

T_j

Junction Temperature

ESM

T_stg

Storage Temperature Range

-55∼ 150

℃

Note : * Package Mounted On FR-5 Board (25.4×19.05×1.57mm)

Marking

H 2

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

SYMBOL

V_F(1)

V_F(2)

V_F(3)

I_R

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

I_F=1mA

0.60

I_F=10mA

Forward Voltage

0.72

I_F=150mA

V_R=80V

1.25

0.5

3.0

4.0

Reverse Current

μA

C_T

V_R=0, f=1MHz

I_F=10mA

Total Capacitance

Reverse Recovery Time

t_rr

2009. 1. 23

Revision No : 1

1/2

中文翻译

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