BAV70-T1-LF

更新时间： 2024-11-21 13:05:51

品牌	Logo	应用领域
WTE		二极管开关
页数	文件大小	规格书
3页	46K
描述
Rectifier Diode, 2 Element, 0.15A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

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数据手册

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BAV70-T1-LF 数据手册

WTE

POWER SEMICONDUCTORS

BAV70

SURFACE MOUNT FAST SWITCHING DIODE

Features

High Conductance

Fast Switching

Surface Mount Package Ideally Suited for

Automatic Insertion

TOP VIEW

For General Purpose and Switching

Plastic Material – UL Recognition Flammability

Classification 94V-O

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SOT-23

Min

Dim

Max

0.51

1.40

2.50

1.05

0.61

2.05

3.05

0.15

1.10

0.61

0.178

0.37

1.19

2.10

0.89

0.45

1.78

2.65

0.013

0.89

0.45

0.076

Mechanical Data

Case: SOT-23, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Weight: 0.008 grams (approx.)

Mounting Position: Any

Marking: JA

TOP VIEW

All Dimensions in mm

Maximum Ratings ^@T_A^{=25°C unless otherwise specified}

Characteristic

Symbol

Value

Unit

Non-Repetitive Peak Reverse Voltage

V^RM

100

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

Forward Continuous Current (Note 1)

I^F

I^O

300

150

Average Rectified Output Current (Note 1)

Peak Forward Surge Current (Note 1)

Power Dissipation (Note 1)

@ t < 1.0µs

I^FSM

P^d

2.0

350

K/W

°C

Typical Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

R^ꢀ^JA

T^j, T^STG

357

-65 to +150

Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Characteristic

Symbol

Min

Max

Unit

Test Condition

@ I^F= 10mA

—

0.855

1.0

Forward Voltage

V^F

@ I^F= 50mA

Reverse Leakage Current

Junction Capacitance

I^R

C^j

—

2.5

2.0

µA

@ V^R= 75V

V^R= 0V, f = 1.0MHz

I^F= I^R= 10mA,

Reverse Recovery Time

t^rr

—

6.0

I^RR= 0.1 x I^R, R^L= 100ꢀ

Note: 1. Device mounted on fiberglass substrate 40 x 40 x 1.5mm.

BAV70

1 of 3

12 3

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