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BAV70T PDF预览

BAV70T

更新时间: 2024-11-21 04:08:51
品牌 Logo 应用领域
TRSYS 二极管光电二极管
页数 文件大小 规格书
2页 75K
描述
Plastic-Encapsulated Diodes

BAV70T 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.68Base Number Matches:1

BAV70T 数据手册

 浏览型号BAV70T的Datasheet PDF文件第2页 
Transys  
Electronics  
L
I M I T E D  
SOT-523 Plastic-Encapsulated Diodes  
BAS16T/BAW56T/BAV70T/BAV99T  
SWITCHING DIODE  
SOT-523  
FEATURES  
Power dissipation  
PD:  
150 mW (Tamb=25)  
Forward Current  
IF:  
Reverse Voltage  
VR:  
75 m A  
85  
V
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
BAS16T Marking: A2  
BAW56T Marking: JD  
BAV70T Marking: JJ  
BAV99T Marking: JE  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)  
IR1  
Test conditions  
IR= 100µA  
VR=75V  
MIN  
MAX  
UNIT  
V
85  
Reverse breakdown voltage  
2
µA  
µA  
Reverse voltage leakage current  
Forward voltage  
IR2  
VR=25V  
0.03  
IF=1mA  
IF=10mA  
IF=50mA  
IF=150mA  
715  
855  
VF  
mV  
1000  
1250  
CD  
t r r  
VR=0V, f=1MHz  
1.5  
4
Diode capacitance  
Reverse recovery time  
pF  
nS  

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