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BAV70S,115 PDF预览

BAV70S,115

更新时间: 2024-02-20 00:07:38
品牌 Logo 应用领域
恩智浦 - NXP 测试光电二极管
页数 文件大小 规格书
15页 96K
描述
BAV70 series - High-speed switching diodes TSSOP 6-Pin

BAV70S,115 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TSSOP
包装说明:R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.2
配置:2 BANKS, COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.3 V
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:4
端子数量:6最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.35 W认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向电流:2.5 µA
最大反向恢复时间:0.004 µs反向测试电压:75 V
子类别:Signal Diodes表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

BAV70S,115 数据手册

 浏览型号BAV70S,115的Datasheet PDF文件第2页浏览型号BAV70S,115的Datasheet PDF文件第3页浏览型号BAV70S,115的Datasheet PDF文件第4页浏览型号BAV70S,115的Datasheet PDF文件第5页浏览型号BAV70S,115的Datasheet PDF文件第6页浏览型号BAV70S,115的Datasheet PDF文件第7页 
BAV70 series  
High-speed switching diodes  
Rev. 07 — 27 November 2007  
Product data sheet  
1. Product profile  
1.1 General description  
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)  
plastic packages.  
Table 1.  
Product overview  
Type number Package  
NXP  
Package  
configuration  
Configuration  
JEITA  
-
JEDEC  
BAV70  
SOT23  
TO-236AB small  
dual common cathode  
dual common cathode  
BAV70M  
SOT883  
SC-101  
-
leadless ultra  
small  
BAV70S  
SOT363  
SC-88  
-
very small  
quadruple common  
cathode/common cathode  
BAV70T  
BAV70W  
SOT416  
SOT323  
SC-75  
SC-70  
-
-
ultra small  
very small  
dual common cathode  
dual common cathode  
1.2 Features  
I High switching speed: trr 4 ns  
I Low leakage current  
I Low capacitance: Cd 1.5 pF  
I Reverse voltage: VR 100 V  
I Small SMD plastic packages  
1.3 Applications  
I High-speed switching  
I General-purpose switching  
1.4 Quick reference data  
Table 2.  
Symbol  
Per diode  
IR  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
reverse current  
VR = 80 V  
-
-
-
-
-
-
0.5  
100  
4
µA  
V
VR  
reverse voltage  
[1]  
trr  
reverse recovery time  
ns  
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.  
 
 
 
 
 
 
 
 

BAV70S,115 替代型号

型号 品牌 替代类型 描述 数据表
BAV70S,135 NXP

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BAV70 series - High-speed switching diodes TSSOP 6-Pin
BAS28,215 NXP

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