Datasheet > BAV70LT1D

BAV70LT1D

更新时间： 2024-11-21 04:08:51

品牌	Logo	应用领域
安森美 - ONSEMI		二极管开关
页数	文件大小	规格书
1页	103K
描述
Monolithic Dual Switching Diode Common Cathode

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中文翻译

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BAV70LT1D 数据手册

Transys

Electronics

I M I T E D

SOT-23 Plastic-Encapsulated Diodes

BAV70LT1 SWITCHING DIODE

SOT-23

FEATURES

Power dissipation

P_D:

225 mW(Tamb=25℃)

2. 4

1. 3

Forward Current

I_F:

Reverse Voltage

V_R:

200 mA

Operating and storage junction temperature range

Unit: mm

T_J, T_stg: -55℃ to +15℃

Mar ki ng A4

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)

I_R

Test conditions

I_R= 100µA

MIN

MAX

UNIT

Reverse breakdown voltage

Reverse voltage leakage current

V_R=70V

2.5

µA

I_F=1mA

I_F=10mA

I_F=50mA

I_F=150mA

715

855

V_F

Forward voltage

1000

1250

C_D

V_R=0V,f=1MHz

1.5

Diode capacitance

Reverse recovery time

I_F=I_R=10mA

I_R=1mA ,V_R=5V

R_C=100Ω

t _{r r}

中文翻译

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