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BAV70-MR PDF预览

BAV70-MR

更新时间: 2024-02-19 08:01:12
品牌 Logo 应用领域
其他 - ETC 二极管过程控制系统PCS
页数 文件大小 规格书
3页 28K
描述
DIODE BAV70 MINIREEL 500PCS

BAV70-MR 技术参数

生命周期:Active零件包装代码:SC-70
针数:3Reach Compliance Code:compliant
风险等级:5.69二极管类型:RECTIFIER DIODE
Base Number Matches:1

BAV70-MR 数据手册

 浏览型号BAV70-MR的Datasheet PDF文件第2页浏览型号BAV70-MR的Datasheet PDF文件第3页 
Discr ete P OWER & Sign a l  
Tech n ologies  
BAV70 / 74  
3
CONNECTION DIAGRAMS  
3
3
A4  
1
2
2
MARKING  
A4 BAV74  
1
2
SOT-23  
1
BAV70  
JA  
High Conductance Ultra Fast Diode  
Sourced from Process 1P. See BAV99 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
WIV  
Working Inverse Voltage  
70  
50  
V
V
BAV70  
BAV74  
IO  
Average Rectified Current  
DC Forward Current  
200  
mA  
IF  
600  
700  
mA  
mA  
Recurrent Peak Forward Current  
if  
Peak Forward Surge Current  
Pulse width = 1.0 second  
if(surge)  
1.0  
2.0  
A
A
Pulse width = 1.0 microsecond  
Storage Temperature Range  
-55 to +150  
C
°
Tstg  
TJ  
Operating Junction Temperature  
150  
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
BAV70/74  
PD  
Total Device Dissipation  
Derate above 25 C  
350  
2.8  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Ambient  
357  
Rθ  
C/W  
°
JA  
ã 1997 Fairchild Semiconductor Corporation  

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