Datasheet > BAV70LT1

BAV70LT1

更新时间： 2024-11-18 08:48:59

品牌	Logo	应用领域
TGS		二极管开关
页数	文件大小	规格书
2页	364K
描述
SOT-23 Plastic-Encapsulate Diodes (SWITCHING DIODE)

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BAV70LT1 数据手册

TIGER ELECTRONIC CO.,LTD

SOT-23 Plastic-Encapsulate Diodes

SOT-23

BAW56/BAV70/BAV99

SWITCHING DIODE

FEATURES

Fast Switching Speed

For General Purpose Switching Applications

High Conductance

BAW56 Marking: A1

BAV70 Marking: A4

BAV99 Marking: A7

Maximum Ratings @Ta=25℃

Parameter

Symbol

Limit

Unit

Reverse Voltage

V_R

I_F

200

500

Forward Current

Peak Forward Surge Current

Power Dissipation

I_FM(surge)

P_D

225

℃/W

556

Thermal Resistance Junction to Ambient

Junction Temperature

Storage Temperature range

R_θJA

T_J

150

℃

-55~+150

T_STG

℃

Electrical Characteristics @Ta=25℃

Parameter

Symbol

V _R

Min

Typ

Max

Unit

Conditions

Reverse breakdown voltage

I_R=100μA

I_F=1mA

0.715

0.855

V_F1

V_F2

I_F=10mA

Forward voltage

V_F3

V_F4

I_F=50mA

1.25

2.5

I_F=150mA

Reverse current

I_R

μA

V_R=70V

1.5

Capacitance between terminals

C_T

V_R=0,f=1MHz

I_F= I_R= 10mA,

Reverse recovery time

t _{r r}

Irr= 0.1 x I_R, R_L= 100Ω

A,May,2011

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